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PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 -- 9 December 2008 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9115T.
1.2 Features
I I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Small SMD plastic package
1.3 Applications
I I I I I I LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA Conditions open base Min 100 Typ 250 Max 150 1 Unit V A
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 2
sym021
Simplified outline
3
Graphic symbol
3 1
3. Ordering information
Table 3. Ordering information Package Name PBHV8115T Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 4. Marking codes Marking code[1] W6* Type number PBHV8115T
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
2 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg
[1]
Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature
Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C
[1]
Min -55 -65
Max 400 150 6 1 2 400 300 150 +150 +150
Unit V V V A A mA mW C C C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
400 Ptot (mW) 300
006aab150
200
100
0 -75
-25
25
75
125 175 Tamb (C)
FR4 PCB, standard footprint
Fig 1.
Power derating curve
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
3 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Rth(j-sp)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air
[1]
Min -
Typ -
Max 417 70
Unit K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01
006aab151
1
0
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
4 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current Conditions VCB = 120 V; IE = 0 A VCB = 120 V; IE = 0 A; Tj = 150 C Min Typ Max 100 10 100 100 Unit nA A nA nA
ICES IEBO hFE
collector-emitter cut-off VCE = 120 V; VBE = 0 V current emitter-base cut-off current DC current gain VEB = 4 V; IC = 0 A VCE = 10 V IC = 50 mA IC = 100 mA IC = 0.5 A IC = 1 A
[1] [1]
100 100 50 10 [1] [1]
250 250 160 30 40 33 225 1.1 30 5.7 150 7 565 572 1530 700 2230
60 50 350 1.2 mV mV mV V MHz pF pF ns ns ns ns ns ns
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 10 mA IC = 100 mA; IB = 20 mA IC = 1 A; IB = 200 mA
-
VBEsat fT Cc Ce td tr ton ts tf toff
[1]
base-emitter saturation IC = 1 A; IB = 200 mA voltage transition frequency collector capacitance emitter capacitance delay time rise time turn-on time storage time fall time turn-off time VCE = 10 V; IE = 10 mA; f = 100 MHz VCB = 20 V; IE = ie = 0 A; f = 1 MHz VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = -0.1 A
Pulse test: tp 300 s; 0.02.
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
5 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
500 hFE 400
(1)
006aab158
2.0 IC (A) 1.6
006aab159
IB (mA) = 300 270 240 210 180 150 120 90 60
300
(2)
1.2
200
(3)
0.8
30
100
0.4
0 10-1
1
10
102
103 104 IC (mA)
0 0 1 2 3 4 VCE (V) 5
VCE = 10 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C
Fig 3.
DC current gain as a function of collector current; typical values
1.2
006aab160
Fig 4.
Collector current as a function of collector-emitter voltage; typical values
1.3
006aab161
VBE (V)
(1)
VBEsat (V) 0.9
(2) (1) (2) (3)
0.8
(3)
0.4
0.5
0 10-1
1
10
102
103 104 IC (mA)
0.1 10-1
1
10
102
103 104 IC (mA)
VCE = 10 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
IC/IB = 5 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 5.
Base-emitter voltage as a function of collector current; typical values
Fig 6.
Base-emitter saturation voltage as a function of collector current; typical values
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
6 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
1 VCEsat (V) 10-1
(1) (2)
006aab162
10 VCEsat (V) 1
006aab163
10-1
(1) (2)
10-2
(3)
(3)
10-2
10-3 10-1
1
10
102
103 104 IC (mA)
10-3 10-1
1
10
102
103 104 IC (mA)
IC/IB = 5 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
006aab164
Fig 8.
Collector-emitter saturation voltage as a function of collector current; typical values
006aab165
103 RCEsat () 102
103 RCEsat () 102
10
10
(1) (2)
1
(1) (2) (3)
1
(3)
10-1 10-1
1
10
102
103 104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
IC/IB = 5 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C
Tamb = 25 C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5
Fig 9.
Collector-emitter saturation resistance as a function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
7 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
8. Test information
VBB VCC
RB oscilloscope VI R1 (probe) 450 R2
RC Vo (probe) 450 DUT oscilloscope
mlb826
Fig 11. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
9. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 12. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV8115T
[1]
PBHV8115T_2
Package SOT23
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -215 10000 -235
For further information and the availability of packing methods, see Section 14.
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
8 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
11. Soldering
3.3 2.9 1.9
solder lands solder resist 3 1.7 2 solder paste 0.6 (3x) occupied area Dimensions in mm 0.5 (3x) 0.6 (3x) 1
sot023_fr
0.7 (3x)
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
2.2 1.2 (2x)
1.4 (2x) solder lands 4.6 2.6 solder resist occupied area Dimensions in mm 1.4
preferred transport direction during soldering 2.8 4.5
sot023_fw
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
9 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20081209 Data sheet status Product data sheet Change notice Supersedes PBHV8115T_1 Document ID PBHV8115T_2 Modifications:
* * *
Table 5: IBM maximum value changed from 100 mA to 400 mA Figure 4: amended Section 13 "Legal information": updated Product data sheet -
PBHV8115T_1
20080204
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
10 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBHV8115T_2
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 -- 9 December 2008
11 of 12
NXP Semiconductors
PBHV8115T
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 December 2008 Document identifier: PBHV8115T_2

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